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CEP10N4/CEB10N4
CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
Type VDSS RDS(ON) ID @VGS
CEP10N4 450V 0.7 10A 10V
CEB10N4 450V 0.7 10A 10V
CEI10N4 450V 0.7 10A 10V
CEF10N4 450V 0.7 10A e 10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

G
D

G G G
G D D D
S S S S S
CEB SERIES CEI SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-262(I2-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263/262 TO-220F
Drain-Source Voltage VDS 450 V
Gate-Source Voltage VGS