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MSB92WT1G,
MSB92AWT1G
PNP Silicon General
Purpose High Voltage
Transistor
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This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 COLLECTOR
package which is designed for low power surface mount applications. 3
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
1 2
MAXIMUM RATINGS (TA = 25C)
BASE EMITTER
Rating Symbol Value Unit
Collector-Base Voltage V(BR)CBO --300 Vdc
3 SC-
-70 (SOT--323)
Collector-Emitter Voltage V(BR)CEO --300 Vdc CASE 419
1
STYLE 3
Emitter-Base Voltage V(BR)EBO --5.0 Vdc 2
Collector Current -- Continuous IC 500 mAdc
Electrostatic Discharge ESD MBM>16,000, V MARKING DIAGRAM
MM>2,000
THERMAL CHARACTERISTICS xx M G
Rating Symbol Max Unit G
Power Dissipation (Note 1) PD 150 mW 1
Junction Temperature TJ 150 C xx = Device Code
x= 2D or D2
Storage Temperature Range Tstg --55 to +150 C
M = Date Code*
Stresses exceeding Maximum Ratings may damage the device. Maximum G = Pb--Free Package
Ratings are stress ratings only. Functional operation above the Recommended (Note: Microdot may be in either location)
Operating Conditions is not implied. Extended exposure to stresses above the *Date Code orientation may vary depending
Recommended Operating Conditions may affect device reliability. upon manufacturing location.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
ORDERING INFORMATION
Device Package Shipping
MSB92WT1G SC--70/ 3000/Tape & Reel
SOT--323
(Pb--Free)
MSB92AWT1G SC--70/ 3000/Tape & Reel
SOT--323
(Pb--Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 7
- MSB92WT1/D
MSB92WT1G, MSB92AWT1G
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO --300 -- Vdc
(IC = --1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage V(BR)CBO --300 -- Vdc
(IC = --100 mAdc, IE = 0)
Emitter-Base Breakdown Voltage V(BR)EBO --5.0 -- Vdc
(IE = --100 mAdc, IE = 0)
Collector-Base Cutoff Current ICBO -- --0.25 mA
(VCB = --200 Vdc, IE = 0)
Emitter--Base Cutoff Current IEBO -- --0.1 mA
(VEB = --3.0 Vdc, IB = 0)
DC Current Gain (Note 2) --
MSB92WT1: (VCE = --10 Vdc, IC = --1.0 mAdc) hFE1 25 --
MSB92AWT1: (VCE = --10 Vdc, IC = --1.0 mAdc) hFE1 120 200
(VCE = --10 Vdc, IC = --10 mAdc) hFE2 40 --
(VCE = --10 Vdc, IC = --30 mAdc) hFE3 25 --
Collector-Emitter Saturation Voltage (Note 2) VCE(sat) -- --0.5 Vdc
(IC = --20 mAdc, IB = --2.0 mAdc)
Base--Emitter Saturation Voltage VBE(sat) -- --0.9 Vdc
(IC = --20 mAdc, IB = --2.0 mAdc)
SMALL SIGNAL CHARACTERISTICS
Current -- Gain -- Bandwidth Product fT 50 -- MHz
(IC = --10 mAdc, VCE = --20 Vdc, f = 20 MHz)
Collector--Base Capacitance Ccb -- 6.0 pF
(VCB = --20 Vdc, IE = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
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2
MSB92WT1G, MSB92AWT1G
120
VCE = 10 Vdc
TJ = +125C
100
hFE , DC CURRENT GAIN
80
25C
60
40
--55C
20
0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
Ceb @ 1MHz
C, CAPACITANCE (pF)
10
1.0 Ccb @ 1MHz
0.1
0.1 1.0 10 100 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
1.4
1.2
VCE(sat) @ 25C, IC/IB = 10
VCE(sat) @ 125C, IC/IB = 10
1.0
V, VOLTAGE (VOLTS)
VCE(sat) @ --55C, IC/IB = 10
0.8 VBE(sat) @ 25C, IC/IB = 10
VBE(sat) @ 125C, IC/IB = 10
0.6 VBE(sat) @ --55C, IC/IB = 10
VBE(on) @ 25C, VCE = 10 V
0.4 VBE(on) @ 125C, VCE = 10 V
VBE(on) @ --55C, VCE = 10 V
0.2
0.0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 3. "ON" Voltages
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3
MSB92WT1G, MSB92AWT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 3:
c
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Email: [email protected] Phone: 81--3--5773--3850 Sales Representative
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