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BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
General Purpose Transistor
NPN Silicon COLLECTOR
3 3 MARKING DIAGRAM
3
1 XX = Device
1 Code (See
BASE 2
SOT-23 Table Below)
*Moisture Sensitivity Level: 1
*ESD Rating - Human Body Model:>4000V 2
1 2
EMITTER
-Machine Model:>400V
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage BC846 VCEO 65 Vdc
BC847, BC850 45
BC848, BC849 30
Collector-Base Voltage BC846 VCBO 80 Vdc
BC847, BC850 50
BC848, BC849 30
Emitter-Base VOltage BC846 VEBO 6.0 Vdc
BC847, BC850 6.0
BC848, BC849 5.0
Collector Current-Continuous IC 100 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board PD
(Note 1.)TA=25 C 225 mW
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient (Note 1.) R qJA 556 C/W
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C PD 300 mW
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient (Note 2.) R qJA 417 C/W
Junction and Storage, Temperature Range TJ,Tstg -55 to +150 C
Device Marking
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J;
BC848B;=1K; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
WE ITR O N
http://www.weitron.com.tw
BC846A/B-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C WE IT R ON
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO 65 - - V
(IC= 10mA) BC847A,B,C BC850B.C 45 - -
BC848A,B,C BC849B,C 30 - -
Collector-Emitter Breakdown VoltageBC846A,B V(BR)CES 80 - - V
(IC=10