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September 1996
NDT014
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Power SOT N-Channel enhancement mode power field effect 2.7A, 60V. RDS(ON) = 0.2 @ VGS = 10V.
transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low RDS(ON).
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide High power and current handling capability in a widely used
superior switching performance. These devices are particularly surface mount package.
suited for low voltage applications such as DC motor control
and DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
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D D
G D S G S
Absolute Maximum Ratings T A = 25