Text preview for : rn2712je_rn2713je_071101.pdf part of Toshiba rn2712je rn2713je 071101 . Electronic Components Datasheets Active components Transistors Toshiba rn2712je_rn2713je_071101.pdf



Back to : rn2712je_rn2713je_071101. | Home

RN2712JE,RN2713JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)


RN2712JE, RN2713JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications Unit : mm


Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
A wide range of resistor values is available for use in various circuits.


Equivalent Circuit

1.BASE1 (B1)
2.EMITTER (E)
3.BASE2 (B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)


JEDEC
Absolute Maximum Ratings (Ta = 25