Text preview for : k2645.pdf part of FUSI 2SK2645-01MR - High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
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2SK2645-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
600V
1,2
9A
50W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings ( T
C=25°C), unless otherwise specified
> Equivalent Circuit
Rating 600 9 32 ±30 9 71,9 50 150 -55 ~ +150 Unit V A A V A mJ W °C °C
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range
Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg
- Electrical Characteristics (TC=25°C),
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge
unless otherwise specified
Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=600V Tch =25°C VGS=0V Tch=125°C VGS =±30V VDS=0V ID=4A VGS =10V ID=4A VDS=25V VDS=25V VGS =0V f=1MHz VCC=300V ID=9A VGS=10V RGS=10 Tch =25°C L = 100µH IF=2xI DR VGS =0V T ch =25°C IF=IDR V GS =0V -dI F/dt=100A/µs T ch =25°C
Min. 600 3,5
Typ. 4,0 10 0,2 10 1,0 5 900 150 70 25 70 60 35 1,0 550 7,0
Max. 4,5 500 1,0 100 1,2 1400 230 110 40 110 90 60 1,5
2,5
9
Unit V V µA mA nA S pF pF pF ns ns ns ns A V ns µC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 62,5 2,5
Unit °C/W °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
600V
1,2
2SK2645-01MR
FAP-IIS Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=4A; VGS=10V
9A
50W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
ID [A]
RDS(ON) []
2
ID [A]
1
3
VDS [V]
Tch [°C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) []
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [°C]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=9A; Tc=25°C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
C [F]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Avalanche Energy Derating
Eas=f(starting Tch); VCC=60V; IAV=9A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
Zth(ch-c) [K/W]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
Eas [mJ]
10
ID [A]
12
Starting Tch [°C]
VDS [V]
t [s]
This specification is subject to change without notice!